Resistive Random Access Memory Market is estimated to increase at a CAGR of 69.9 percent during the forecast period 2020-2025
Resistive Random Access Memory: Resistive RAM (resistive random access memory) is a type of nonvolatile storage that works by altering the resistance of a solid dielectric substance. A component called me mister is found in ReRAM devices, and its resistance changes when different voltages are applied to it. As a result, NAND memory consumes far more power than ReRAM and other memristor technologies. As a result, they're currently the greatest choice for memory in sensor devices for industrial, automotive, and IoT applications. Regional Analysis: The Resistive Random Access Memory Market was valued at 280 Million USD in 2020 and is projected to reach 19700 Million USD by 2025, at a CAGR of 69.9%. In many regions, the increased adoption of sensor technology, such as wearable and AI-enabled products, has boosted demand for rapid data transfers and high storage density, resulting in a huge opportunity for the global resistive random access memory market to develop. The rising costs of